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Product overview

Product number
FF45MR12W1M1PB11BPSA1
Manufacturer
Infineon Technologies
Catalog
Transistors - FETs, MOSFETs - Arrays
product description
LOW POWER EASY AG-EASY1BM-2

Documents and media

Product Details

Current - Continuous Drain (Id) @ 25°C :
25A (Tj)
Drain to Source Voltage (Vdss) :
1200V (1.2kV)
FET Feature :
Silicon Carbide (SiC)
FET Type :
2 N-Channel (Dual)
Gate Charge (Qg) (Max) @ Vgs :
62nC @ 15V
Input Capacitance (Ciss) (Max) @ Vds :
1.84nF @ 800V
Mounting Type :
Chassis Mount
Operating Temperature :
-40°C ~ 150°C (TJ)
Package / Case :
Module
Part Status :
Active
Power - Max :
20mW (Tc)
Rds On (Max) @ Id, Vgs :
45mOhm @ 25A, 15V
Supplier Device Package :
AG-EASY1BM
Vgs(th) (Max) @ Id :
5.55V @ 10mA

product description

LOW POWER EASY AG-EASY1BM-2

Purchases and prices

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