Product overview
Documents and media
- Datasheets
- FDMQ8203
Product Details
- Current - Continuous Drain (Id) @ 25°C :
- 3.4A, 2.6A
- Drain to Source Voltage (Vdss) :
- 100V, 80V
- FET Feature :
- Logic Level Gate
- FET Type :
- 2 N and 2 P-Channel (H-Bridge)
- Gate Charge (Qg) (Max) @ Vgs :
- 5nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 210pF @ 50V
- Mounting Type :
- Surface Mount
- Operating Temperature :
- -55°C ~ 150°C (TJ)
- Package / Case :
- 12-WDFN Exposed Pad
- Part Status :
- Active
- Power - Max :
- 2.5W
- Rds On (Max) @ Id, Vgs :
- 110mOhm @ 3A, 10V
- Supplier Device Package :
- 12-MLP (5x4.5)
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
product description
MOSFET 2N/2P-CH 100V/80V 12-MLP