Product overview
Documents and media
- Datasheets
- SI4816BDY-T1-E3
Product Details
- Current - Continuous Drain (Id) @ 25°C :
- 5.8A, 8.2A
- Drain to Source Voltage (Vdss) :
- 30V
- FET Feature :
- Logic Level Gate
- FET Type :
- 2 N-Channel (Half Bridge)
- Gate Charge (Qg) (Max) @ Vgs :
- 10nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds :
- -
- Mounting Type :
- Surface Mount
- Operating Temperature :
- -55°C ~ 150°C (TJ)
- Part Status :
- Active
- Power - Max :
- 1W, 1.25W
- Rds On (Max) @ Id, Vgs :
- 18.5mOhm @ 6.8A, 10V
- Supplier Device Package :
- 8-SOIC
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
product description
MOSFET 2N-CH 30V 5.8A 8-SOIC