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Product overview

Product number
APTSM120AM55CT1AG
Manufacturer
Microchip Technology
Catalog
Transistors - FETs, MOSFETs - Arrays
product description
POWER MODULE - SIC

Documents and media

Datasheets
APTSM120AM55CT1AG

Product Details

Current - Continuous Drain (Id) @ 25°C :
74A (Tc)
Drain to Source Voltage (Vdss) :
1200V (1.2kV)
FET Feature :
Silicon Carbide (SiC)
FET Type :
2 N-Channel (Dual), Schottky
Gate Charge (Qg) (Max) @ Vgs :
272nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds :
5120pF @ 1000V
Mounting Type :
Chassis Mount
Operating Temperature :
-40°C ~ 175°C (TJ)
Package / Case :
SP1
Part Status :
Active
Power - Max :
470W
Rds On (Max) @ Id, Vgs :
50mOhm @ 40A, 20V
Supplier Device Package :
SP1
Vgs(th) (Max) @ Id :
3V @ 2mA

product description

POWER MODULE - SIC

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