Product overview
- Product number
- SI1926DL-T1-GE3
- Manufacturer
- Vishay
- product description
- MOSFET 2N-CH 60V 0.37A SOT363
Documents and media
- Datasheets
- SI1926DL-T1-GE3
Product Details
- Current - Continuous Drain (Id) @ 25°C :
- 370mA
- Drain to Source Voltage (Vdss) :
- 60V
- FET Feature :
- Logic Level Gate
- FET Type :
- 2 N-Channel (Dual)
- Gate Charge (Qg) (Max) @ Vgs :
- 1.4nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 18.5pF @ 30V
- Mounting Type :
- Surface Mount
- Operating Temperature :
- -55°C ~ 150°C (TJ)
- Package / Case :
- 6-TSSOP, SC-88, SOT-363
- Part Status :
- Active
- Power - Max :
- 510mW
- Rds On (Max) @ Id, Vgs :
- 1.4Ohm @ 340mA, 10V
- Supplier Device Package :
- SC-70-6
- Vgs(th) (Max) @ Id :
- 2.5V @ 250µA
product description
MOSFET 2N-CH 60V 0.37A SOT363
Purchases and prices
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