Product overview
- Product number
- SI4590DY-T1-GE3
- Manufacturer
- Vishay
- product description
- MOSFET N/P CHAN 100V SO8 DUAL
Documents and media
- Datasheets
- SI4590DY-T1-GE3
Product Details
- Current - Continuous Drain (Id) @ 25°C :
- 3.4A, 2.8A
- Drain to Source Voltage (Vdss) :
- 100V
- FET Feature :
- -
- FET Type :
- N and P-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 11.5nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 360pF @ 50V
- Mounting Type :
- Surface Mount
- Operating Temperature :
- -55°C ~ 150°C (TJ)
- Part Status :
- Active
- Power - Max :
- 2.4W, 3.4W
- Rds On (Max) @ Id, Vgs :
- 57mOhm @ 2A, 10V
- Supplier Device Package :
- 8-SOIC
- Vgs(th) (Max) @ Id :
- 2.5V @ 250µA
product description
MOSFET N/P CHAN 100V SO8 DUAL