Product overview
Documents and media
- Datasheets
- SI3590DV-T1-E3
Product Details
- Current - Continuous Drain (Id) @ 25°C :
- 2.5A, 1.7A
- Drain to Source Voltage (Vdss) :
- 30V
- FET Feature :
- Logic Level Gate
- FET Type :
- N and P-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 4.5nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds :
- -
- Mounting Type :
- Surface Mount
- Operating Temperature :
- -55°C ~ 150°C (TJ)
- Package / Case :
- SOT-23-6 Thin, TSOT-23-6
- Part Status :
- Active
- Power - Max :
- 830mW
- Rds On (Max) @ Id, Vgs :
- 77mOhm @ 3A, 4.5V
- Supplier Device Package :
- 6-TSOP
- Vgs(th) (Max) @ Id :
- 1.5V @ 250µA
product description
MOSFET N/P-CH 30V 2.5A 6TSOP
Purchases and prices
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