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Product overview

Product number
TQM110NB04DCR RLG
Manufacturer
Taiwan Semiconductor
Catalog
Transistors - FETs, MOSFETs - Arrays
product description
40V, 50A, DUAL N-CHANNEL POWER M

Documents and media

Datasheets
TQM110NB04DCR RLG

Product Details

Current - Continuous Drain (Id) @ 25°C :
10A (Ta), 50A (Tc)
Drain to Source Voltage (Vdss) :
40V
FET Feature :
Standard
FET Type :
2 N-Channel (Dual)
Gate Charge (Qg) (Max) @ Vgs :
26nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds :
1354pF @ 20V
Mounting Type :
Surface Mount, Wettable Flank
Operating Temperature :
-55°C ~ 175°C (TJ)
Package / Case :
8-PowerTDFN
Part Status :
Active
Power - Max :
2.5W (Ta), 58W (Tc)
Rds On (Max) @ Id, Vgs :
11mOhm @ 10A, 10V
Supplier Device Package :
8-PDFNU (5x6)
Vgs(th) (Max) @ Id :
3.8V @ 250µA

product description

40V, 50A, DUAL N-CHANNEL POWER M

Purchases and prices

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