Product overview
- Product number
- BSG0810NDIATMA1
- Manufacturer
- Infineon Technologies
- product description
- MOSFET 2N-CH 25V 19A/39A 8TISON
Documents and media
- Datasheets
- BSG0810NDIATMA1
Product Details
- Current - Continuous Drain (Id) @ 25°C :
- 19A, 39A
- Drain to Source Voltage (Vdss) :
- 25V
- FET Feature :
- Logic Level Gate, 4.5V Drive
- FET Type :
- 2 N-Channel (Dual) Asymmetrical
- Gate Charge (Qg) (Max) @ Vgs :
- 8.4nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds :
- 1040pF @ 12V
- Mounting Type :
- Surface Mount
- Operating Temperature :
- -55°C ~ 155°C (TJ)
- Package / Case :
- 8-PowerTDFN
- Part Status :
- Active
- Power - Max :
- 2.5W
- Rds On (Max) @ Id, Vgs :
- 3mOhm @ 20A, 10V
- Supplier Device Package :
- PG-TISON-8
- Vgs(th) (Max) @ Id :
- 2V @ 250µA
product description
MOSFET 2N-CH 25V 19A/39A 8TISON
