Product overview
Documents and media
- Datasheets
- NTMD6601NR2G
Product Details
- Current - Continuous Drain (Id) @ 25°C :
- 1.1A
- Drain to Source Voltage (Vdss) :
- 80V
- FET Feature :
- Logic Level Gate
- FET Type :
- 2 N-Channel (Dual)
- Gate Charge (Qg) (Max) @ Vgs :
- 15nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 400pF @ 25V
- Mounting Type :
- Surface Mount
- Operating Temperature :
- -55°C ~ 150°C (TJ)
- Part Status :
- Obsolete
- Power - Max :
- 600mW
- Rds On (Max) @ Id, Vgs :
- 215mOhm @ 2.2A, 10V
- Supplier Device Package :
- 8-SOIC
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
product description
MOSFET 2N-CH 80V 1.1A 8SOIC
Purchases and prices
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