Product overview
- Product number
- FQS4900TF
- Manufacturer
- Rochester Electronics
- product description
- POWER FIELD-EFFECT TRANSISTOR, 1
Documents and media
- Datasheets
- FQS4900TF
Product Details
- Current - Continuous Drain (Id) @ 25°C :
- 1.3A, 300mA
- Drain to Source Voltage (Vdss) :
- 60V, 300V
- FET Feature :
- Standard
- FET Type :
- N and P-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 2.1nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds :
- -
- Mounting Type :
- Surface Mount
- Operating Temperature :
- -55°C ~ 150°C (TJ)
- Part Status :
- Active
- Power - Max :
- 2W
- Rds On (Max) @ Id, Vgs :
- 550mOhm @ 650mA, 10V
- Supplier Device Package :
- 8-SOIC
- Vgs(th) (Max) @ Id :
- 1.95V @ 20mA
product description
POWER FIELD-EFFECT TRANSISTOR, 1
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