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Product overview

Product number
ZXMN3F31DN8TA
Manufacturer
Diodes Incorporated
Catalog
Transistors - FETs, MOSFETs - Arrays
product description
MOSFET 2N-CH 30V 5.7A 8SOIC

Documents and media

Datasheets
ZXMN3F31DN8TA

Product Details

Current - Continuous Drain (Id) @ 25°C :
5.7A
Drain to Source Voltage (Vdss) :
30V
FET Feature :
Logic Level Gate
FET Type :
2 N-Channel (Dual)
Gate Charge (Qg) (Max) @ Vgs :
12.9nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds :
608pF @ 15V
Mounting Type :
Surface Mount
Operating Temperature :
-55°C ~ 150°C (TJ)
Part Status :
Active
Power - Max :
1.8W
Rds On (Max) @ Id, Vgs :
24mOhm @ 7A, 10V
Supplier Device Package :
8-SO
Vgs(th) (Max) @ Id :
3V @ 250µA

product description

MOSFET 2N-CH 30V 5.7A 8SOIC

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