Product overview
Documents and media
- Datasheets
- EPC2101
Product Details
- Current - Continuous Drain (Id) @ 25°C :
- 9.5A, 38A
- Drain to Source Voltage (Vdss) :
- 60V
- FET Feature :
- GaNFET (Gallium Nitride)
- FET Type :
- 2 N-Channel (Half Bridge)
- Gate Charge (Qg) (Max) @ Vgs :
- 2.7nC @ 5V, 12nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds :
- 300pF @ 30V, 1200pF @ 30V
- Mounting Type :
- Surface Mount
- Operating Temperature :
- -40°C ~ 150°C (TJ)
- Package / Case :
- Die
- Part Status :
- Active
- Power - Max :
- -
- Rds On (Max) @ Id, Vgs :
- 11.5mOhm @ 20A, 5V, 2.7mOhm @ 20A, 5V
- Supplier Device Package :
- Die
- Vgs(th) (Max) @ Id :
- 2.5V @ 3mA, 2.5V @ 12mA
product description
GAN TRANS ASYMMETRICAL HALF BRID
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