Product overview
Documents and media
- Datasheets
- SI1958DH-T1-E3
Product Details
- Current - Continuous Drain (Id) @ 25°C :
- 1.3A
- Drain to Source Voltage (Vdss) :
- 20V
- FET Feature :
- Logic Level Gate
- FET Type :
- 2 N-Channel (Dual)
- Gate Charge (Qg) (Max) @ Vgs :
- 3.8nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 105pF @ 10V
- Mounting Type :
- Surface Mount
- Operating Temperature :
- -55°C ~ 150°C (TJ)
- Package / Case :
- 6-TSSOP, SC-88, SOT-363
- Part Status :
- Obsolete
- Power - Max :
- 1.25W
- Rds On (Max) @ Id, Vgs :
- 205mOhm @ 1.3A, 4.5V
- Supplier Device Package :
- SC-70-6
- Vgs(th) (Max) @ Id :
- 1.6V @ 250µA
product description
MOSFET 2N-CH 20V 1.3A SC70-6
