Product overview
Documents and media
- Datasheets
- EPC2108
Product Details
- Current - Continuous Drain (Id) @ 25°C :
- 1.7A, 500mA
- Drain to Source Voltage (Vdss) :
- 60V, 100V
- FET Feature :
- GaNFET (Gallium Nitride)
- FET Type :
- 3 N-Channel (Half Bridge + Synchronous Bootstrap)
- Gate Charge (Qg) (Max) @ Vgs :
- 0.22nC @ 5V, 0.044nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds :
- 22pF @ 30V, 7pF @ 30V
- Mounting Type :
- Surface Mount
- Operating Temperature :
- -40°C ~ 150°C (TJ)
- Package / Case :
- 9-VFBGA
- Part Status :
- Active
- Power - Max :
- -
- Rds On (Max) @ Id, Vgs :
- 190mOhm @ 2.5A, 5V, 3.3Ohm @ 2.5A, 5V
- Supplier Device Package :
- 9-BGA (1.35x1.35)
- Vgs(th) (Max) @ Id :
- 2.5V @ 100µA, 2.5V @ 20µA
product description
GANFET 3 N-CH 60V/100V 9BGA
