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Product overview

Product number
SSM6N35AFE,LF
Manufacturer
Toshiba Electronic Devices and Storage Corporation
Catalog
Transistors - FETs, MOSFETs - Arrays
product description
MOSFET 2 N-CHANNEL 20V 250MA ES6

Documents and media

Datasheets
SSM6N35AFE,LF

Product Details

Current - Continuous Drain (Id) @ 25°C :
250mA (Ta)
Drain to Source Voltage (Vdss) :
20V
FET Feature :
Logic Level Gate, 1.2V Drive
FET Type :
2 N-Channel (Dual)
Gate Charge (Qg) (Max) @ Vgs :
0.34nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds :
36pF @ 10V
Mounting Type :
Surface Mount
Operating Temperature :
150°C
Package / Case :
SOT-563, SOT-666
Part Status :
Active
Power - Max :
250mW
Rds On (Max) @ Id, Vgs :
1.1Ohm @ 150mA, 4.5V
Supplier Device Package :
ES6
Vgs(th) (Max) @ Id :
1V @ 100µA

product description

MOSFET 2 N-CHANNEL 20V 250MA ES6

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