Product overview
- Product number
- BSO615NGHUMA1
- Manufacturer
- Infineon Technologies
- product description
- MOSFET 2N-CH 60V 2.6A 8SOIC
Documents and media
- Datasheets
- BSO615NGHUMA1
Product Details
- Current - Continuous Drain (Id) @ 25°C :
- 2.6A
- Drain to Source Voltage (Vdss) :
- 60V
- FET Feature :
- Logic Level Gate
- FET Type :
- 2 N-Channel (Dual)
- Gate Charge (Qg) (Max) @ Vgs :
- 20nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 380pF @ 25V
- Mounting Type :
- Surface Mount
- Operating Temperature :
- -55°C ~ 150°C (TJ)
- Part Status :
- Obsolete
- Power - Max :
- 2W
- Rds On (Max) @ Id, Vgs :
- 150mOhm @ 2.6A, 4.5V
- Supplier Device Package :
- PG-DSO-8
- Vgs(th) (Max) @ Id :
- 2V @ 20µA
product description
MOSFET 2N-CH 60V 2.6A 8SOIC
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