Product overview
Documents and media
- Datasheets
- NTMD6N02R2G
Product Details
- Current - Continuous Drain (Id) @ 25°C :
- 3.92A
- Drain to Source Voltage (Vdss) :
- 20V
- FET Feature :
- Logic Level Gate
- FET Type :
- 2 N-Channel (Dual)
- Gate Charge (Qg) (Max) @ Vgs :
- 20nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds :
- 1100pF @ 16V
- Mounting Type :
- Surface Mount
- Operating Temperature :
- -55°C ~ 150°C (TJ)
- Part Status :
- Active
- Power - Max :
- 730mW
- Rds On (Max) @ Id, Vgs :
- 35mOhm @ 6A, 4.5V
- Supplier Device Package :
- 8-SOIC
- Vgs(th) (Max) @ Id :
- 1.2V @ 250µA
product description
MOSFET 2N-CH 20V 3.92A 8SOIC
