Product overview
Documents and media
- Datasheets
- SI4501BDY-T1-GE3
Product Details
- Current - Continuous Drain (Id) @ 25°C :
- 12A, 8A
- Drain to Source Voltage (Vdss) :
- 30V, 8V
- FET Feature :
- Logic Level Gate
- FET Type :
- N and P-Channel, Common Drain
- Gate Charge (Qg) (Max) @ Vgs :
- 25nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 805pF @ 15V
- Mounting Type :
- Surface Mount
- Operating Temperature :
- -55°C ~ 150°C (TJ)
- Part Status :
- Active
- Power - Max :
- 4.5W, 3.1W
- Rds On (Max) @ Id, Vgs :
- 17mOhm @ 10A, 10V
- Supplier Device Package :
- 8-SOIC
- Vgs(th) (Max) @ Id :
- 2V @ 250µA
product description
MOSFET N/P-CH 30V/8V 8SOIC
