Product overview
Documents and media
- Datasheets
- EPC2105ENGRT
Product Details
- Current - Continuous Drain (Id) @ 25°C :
- 9.5A
- Drain to Source Voltage (Vdss) :
- 80V
- FET Feature :
- GaNFET (Gallium Nitride)
- FET Type :
- 2 N-Channel (Half Bridge)
- Gate Charge (Qg) (Max) @ Vgs :
- 2.5nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds :
- 300pF @ 40V
- Mounting Type :
- Surface Mount
- Operating Temperature :
- -40°C ~ 150°C (TJ)
- Package / Case :
- Die
- Part Status :
- Discontinued at Digi-Key
- Power - Max :
- -
- Rds On (Max) @ Id, Vgs :
- 14.5mOhm @ 20A, 5V
- Supplier Device Package :
- Die
- Vgs(th) (Max) @ Id :
- 2.5V @ 2.5mA
product description
GANFET 2NCH 80V 9.5A DIE
Purchases and prices
Recommended Products
You may be looking for
TAP475J006CCS
Q-2W00P0005072I
ACM08DTMN-S273
GCB40DHAS
Q-2W01U0005060I
EMK042CG271JC-W
396-026-559-107
Q-37023000D060I
TAP155M050BRS
396-054-559-258
C0603C680J3HACAUTO
Q-3405G0003048I
TH4C476K6R3C0800
VJ0402A6R8CXQPW1BC
TAP475J010HSB
ACM10DRMN-S273
Q-2X053000R2.5M
GCB34DHBD
Q-2S03F000H018I
MG18B102K101CT