Product overview
- Product number
- FDMD86100
- Manufacturer
- Rochester Electronics
- product description
- POWER FIELD-EFFECT TRANSISTOR
Documents and media
- Datasheets
- FDMD86100
Product Details
- Current - Continuous Drain (Id) @ 25°C :
- 10A
- Drain to Source Voltage (Vdss) :
- 100V
- FET Feature :
- Standard
- FET Type :
- 2 N-Channel (Dual) Common Source
- Gate Charge (Qg) (Max) @ Vgs :
- 30nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 2060pF @ 50V
- Mounting Type :
- Surface Mount
- Operating Temperature :
- -55°C ~ 150°C (TJ)
- Package / Case :
- 8-PowerWDFN
- Part Status :
- Active
- Power - Max :
- 2.2W
- Rds On (Max) @ Id, Vgs :
- 10.5mOhm @ 10A, 10V
- Supplier Device Package :
- 8-Power 5x6
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
product description
POWER FIELD-EFFECT TRANSISTOR
Purchases and prices
Recommended Products
You may be looking for
M83723/82R2025N
MS27472T18C32SC
636L3I027M00000
8WE-27.000MDE-T
3-85188-8
MS27473T20A41P
KK3270012
0022281175
HW-07-09-L-D-375-SM-TR
HW-05-09-F-D-550-180
D38999/20ZJ29SE
DW-10-08-F-D-235
GT8E-6P-DS(56)
DW-07-20-F-D-815
0022280316
SIT9003AC-23-33EB-25.00000T
M83723/95A10067
636L3I032M00000
8NE-27.000MCE-T
3-6447225-9
