Welcome to visit our website, our working hours are: Monday to Friday 9:00-18:00.

Product overview

Product number
FDMS3602S
Manufacturer
Rochester Electronics
Catalog
Transistors - FETs, MOSFETs - Arrays
product description
POWER FIELD-EFFECT TRANSISTOR, 1

Documents and media

Datasheets
FDMS3602S

Product Details

Current - Continuous Drain (Id) @ 25°C :
15A, 26A
Drain to Source Voltage (Vdss) :
25V
FET Feature :
Logic Level Gate
FET Type :
2 N-Channel (Dual)
Gate Charge (Qg) (Max) @ Vgs :
27nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds :
1680pF @ 13V
Mounting Type :
Surface Mount
Operating Temperature :
-55°C ~ 150°C (TJ)
Package / Case :
8-PowerTDFN
Part Status :
Active
Power - Max :
1W
Rds On (Max) @ Id, Vgs :
5.6mOhm @ 15A, 10V
Supplier Device Package :
Power56
Vgs(th) (Max) @ Id :
3V @ 250µA

product description

POWER FIELD-EFFECT TRANSISTOR, 1

Purchases and prices

Recommended Products