Product overview
- Product number
- SSM6L820R,LXHF
- Manufacturer
- Toshiba Electronic Devices and Storage Corporation
- product description
- AUTO AEC-Q SS MOS N-CH + P-CH LO
Documents and media
- Datasheets
- SSM6L820R,LXHF
Product Details
- Current - Continuous Drain (Id) @ 25°C :
- 4A (Ta)
- Drain to Source Voltage (Vdss) :
- 30V, 20V
- FET Feature :
- Standard
- FET Type :
- N and P-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 3.2nC @ 4.5V, 6.7nC @4.5V
- Input Capacitance (Ciss) (Max) @ Vds :
- 310pF @ 15V, 480pF @ 10V
- Mounting Type :
- Surface Mount
- Operating Temperature :
- 150°C
- Package / Case :
- 6-SMD, Flat Leads
- Part Status :
- Active
- Power - Max :
- 1.4W (Ta)
- Rds On (Max) @ Id, Vgs :
- 39.1mOhm @ 2A, 4.5V, 45mOhm @ 3.5A, 10V
- Supplier Device Package :
- 6-TSOP-F
- Vgs(th) (Max) @ Id :
- 1V @ 1mA, 1.2V @ 1mA
product description
AUTO AEC-Q SS MOS N-CH + P-CH LO