Product overview
- Product number
- DMN2019UTS-13
- Manufacturer
- Diodes Incorporated
- product description
- MOSFET 2N-CH 20V 5.4A TSSOP-8
Documents and media
- Datasheets
- DMN2019UTS-13
Product Details
- Current - Continuous Drain (Id) @ 25°C :
- 5.4A
- Drain to Source Voltage (Vdss) :
- 20V
- FET Feature :
- Logic Level Gate
- FET Type :
- 2 N-Channel (Dual) Common Drain
- Gate Charge (Qg) (Max) @ Vgs :
- 8.8nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds :
- 143pF @ 10V
- Mounting Type :
- Surface Mount
- Operating Temperature :
- -55°C ~ 150°C (TJ)
- Part Status :
- Active
- Power - Max :
- 780mW
- Rds On (Max) @ Id, Vgs :
- 18.5mOhm @ 7A, 10V
- Supplier Device Package :
- 8-TSSOP
- Vgs(th) (Max) @ Id :
- 950mV @ 250µA
product description
MOSFET 2N-CH 20V 5.4A TSSOP-8
