Product overview
- Product number
- SI4532DY
- Manufacturer
- Rochester Electronics
- product description
- POWER FIELD-EFFECT TRANSISTOR, 3
Documents and media
- Datasheets
- SI4532DY
Product Details
- Current - Continuous Drain (Id) @ 25°C :
- 3.9A, 3.5A
- Drain to Source Voltage (Vdss) :
- 30V
- FET Feature :
- Standard
- FET Type :
- N and P-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 15nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 235pF @ 10V
- Mounting Type :
- Surface Mount
- Operating Temperature :
- -55°C ~ 150°C (TJ)
- Part Status :
- Active
- Power - Max :
- 900mW
- Rds On (Max) @ Id, Vgs :
- 65mOhm @ 3.9A, 10V
- Supplier Device Package :
- 8-SOIC
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
product description
POWER FIELD-EFFECT TRANSISTOR, 3
