Product overview
- Product number
- FF23MR12W1M1B11BOMA1
- Manufacturer
- Infineon Technologies
- product description
- MOSFET 2 N-CH 1200V 50A MODULE
Documents and media
- Datasheets
- FF23MR12W1M1B11BOMA1
Product Details
- Current - Continuous Drain (Id) @ 25°C :
- 50A
- Drain to Source Voltage (Vdss) :
- 1200V (1.2kV)
- FET Feature :
- Silicon Carbide (SiC)
- FET Type :
- 2 N-Channel (Dual)
- Gate Charge (Qg) (Max) @ Vgs :
- 125nC @ 15V
- Input Capacitance (Ciss) (Max) @ Vds :
- 3950pF @ 800V
- Mounting Type :
- Chassis Mount
- Operating Temperature :
- -40°C ~ 150°C (TJ)
- Package / Case :
- Module
- Part Status :
- Active
- Power - Max :
- 20mW
- Rds On (Max) @ Id, Vgs :
- 23mOhm @ 50A, 15V
- Supplier Device Package :
- Module
- Vgs(th) (Max) @ Id :
- 5.55V @ 20mA
product description
MOSFET 2 N-CH 1200V 50A MODULE
Purchases and prices
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