Product overview
- Product number
- SI7956DP-T1-GE3
- Manufacturer
- Vishay
- product description
- MOSFET 2N-CH 150V 2.6A PPAK SO-8
Documents and media
- Datasheets
- SI7956DP-T1-GE3
Product Details
- Current - Continuous Drain (Id) @ 25°C :
- 2.6A
- Drain to Source Voltage (Vdss) :
- 150V
- FET Feature :
- Logic Level Gate
- FET Type :
- 2 N-Channel (Dual)
- Gate Charge (Qg) (Max) @ Vgs :
- 26nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- -
- Mounting Type :
- Surface Mount
- Operating Temperature :
- -55°C ~ 150°C (TJ)
- Package / Case :
- PowerPAK® SO-8 Dual
- Part Status :
- Active
- Power - Max :
- 1.4W
- Rds On (Max) @ Id, Vgs :
- 105mOhm @ 4.1A, 10V
- Supplier Device Package :
- PowerPAK® SO-8 Dual
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
product description
MOSFET 2N-CH 150V 2.6A PPAK SO-8
Purchases and prices
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