Product overview
Documents and media
- Datasheets
- PMCPB5530X,115
Product Details
- Current - Continuous Drain (Id) @ 25°C :
- 4A (Ta), 3.4A (Ta)
- Drain to Source Voltage (Vdss) :
- 20V
- FET Feature :
- -
- FET Type :
- N and P-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 21.7nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds :
- 660pF @ 10V
- Mounting Type :
- Surface Mount
- Operating Temperature :
- -55°C ~ 150°C (TJ)
- Package / Case :
- 6-UFDFN Exposed Pad
- Part Status :
- Active
- Power - Max :
- 490mW
- Rds On (Max) @ Id, Vgs :
- 34mOhm @ 3A, 4.5V
- Supplier Device Package :
- 6-HUSON (2x2)
- Vgs(th) (Max) @ Id :
- 900mV @ 250µA
product description
MOSFET N/P-CH 20V 6HUSON
