Product overview
Documents and media
- Datasheets
- CAB011M12FM3
Product Details
- Current - Continuous Drain (Id) @ 25°C :
- 105A
- Drain to Source Voltage (Vdss) :
- 1200V (1.2kV)
- FET Feature :
- Silicon Carbide (SiC)
- FET Type :
- 2 N-Channel (Half Bridge)
- Gate Charge (Qg) (Max) @ Vgs :
- 324nC @ 15V
- Input Capacitance (Ciss) (Max) @ Vds :
- 10.3nF @ 800V
- Mounting Type :
- Chassis Mount
- Operating Temperature :
- -40°C ~ 150°C (TJ)
- Package / Case :
- Module
- Part Status :
- Active
- Power - Max :
- 10mW
- Rds On (Max) @ Id, Vgs :
- 14mOhm @ 100A, 15V
- Supplier Device Package :
- -
- Vgs(th) (Max) @ Id :
- 3.6V @ 35mA
product description
1200V SIC H-BRIDGE MODULE