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Product overview

Product number
IPG20N06S415ATMA2
Manufacturer
Infineon Technologies
Catalog
Transistors - FETs, MOSFETs - Arrays
product description
MOSFET 2N-CH 8TDSON

Documents and media

Datasheets
IPG20N06S415ATMA2

Product Details

Current - Continuous Drain (Id) @ 25°C :
20A
Drain to Source Voltage (Vdss) :
60V
FET Feature :
Standard
FET Type :
2 N-Channel (Dual)
Gate Charge (Qg) (Max) @ Vgs :
29nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds :
2260pF @ 25V
Mounting Type :
Surface Mount
Operating Temperature :
-55°C ~ 175°C (TJ)
Package / Case :
8-PowerVDFN
Part Status :
Active
Power - Max :
50W
Rds On (Max) @ Id, Vgs :
15.5mOhm @ 17A, 10V
Supplier Device Package :
PG-TDSON-8-4
Vgs(th) (Max) @ Id :
4V @ 20µA

product description

MOSFET 2N-CH 8TDSON

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