Product overview
- Product number
- SIS903DN-T1-GE3
- Manufacturer
- Vishay
- product description
- MOSFET DUAL P-CHAN POWERPAK 1212
Documents and media
- Datasheets
- SIS903DN-T1-GE3
Product Details
- Current - Continuous Drain (Id) @ 25°C :
- 6A (Tc)
- Drain to Source Voltage (Vdss) :
- 20V
- FET Feature :
- Standard
- FET Type :
- 2 P-Channel (Dual)
- Gate Charge (Qg) (Max) @ Vgs :
- 42nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 2565pF @ 10V
- Mounting Type :
- Surface Mount
- Operating Temperature :
- -55°C ~ 150°C (TJ)
- Package / Case :
- PowerPAK® 1212-8 Dual
- Part Status :
- Active
- Power - Max :
- 2.6W (Ta), 23W (Tc)
- Rds On (Max) @ Id, Vgs :
- 20.1mOhm @ 5A, 4.5V
- Supplier Device Package :
- PowerPAK® 1212-8 Dual
- Vgs(th) (Max) @ Id :
- 1V @ 250µA
product description
MOSFET DUAL P-CHAN POWERPAK 1212
