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Product overview

Product number
FDC6306P
Manufacturer
onsemi
Catalog
Transistors - FETs, MOSFETs - Arrays
product description
MOSFET 2P-CH 20V 1.9A SSOT6

Documents and media

Datasheets
FDC6306P

Product Details

Current - Continuous Drain (Id) @ 25°C :
1.9A
Drain to Source Voltage (Vdss) :
20V
FET Feature :
Logic Level Gate
FET Type :
2 P-Channel (Dual)
Gate Charge (Qg) (Max) @ Vgs :
4.2nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds :
441pF @ 10V
Mounting Type :
Surface Mount
Operating Temperature :
-55°C ~ 150°C (TJ)
Package / Case :
SOT-23-6 Thin, TSOT-23-6
Part Status :
Obsolete
Power - Max :
700mW
Rds On (Max) @ Id, Vgs :
170mOhm @ 1.9A, 4.5V
Supplier Device Package :
SuperSOT™-6
Vgs(th) (Max) @ Id :
1.5V @ 250µA

product description

MOSFET 2P-CH 20V 1.9A SSOT6

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