Product overview
- Product number
- SSM6N61NU,LF
- Manufacturer
- Toshiba Electronic Devices and Storage Corporation
- product description
- MOSFET 2N-CH 20V 4A UDFN
Documents and media
- Datasheets
- SSM6N61NU,LF
Product Details
- Current - Continuous Drain (Id) @ 25°C :
- 4A
- Drain to Source Voltage (Vdss) :
- 20V
- FET Feature :
- Logic Level Gate, 1.5V Drive
- FET Type :
- 2 N-Channel (Dual)
- Gate Charge (Qg) (Max) @ Vgs :
- 3.6nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds :
- 410pF @ 10V
- Mounting Type :
- Surface Mount
- Operating Temperature :
- -55°C ~ 150°C (TJ)
- Package / Case :
- 6-WDFN Exposed Pad
- Part Status :
- Active
- Power - Max :
- 2W
- Rds On (Max) @ Id, Vgs :
- 33mOhm @ 4A, 4.5V
- Supplier Device Package :
- 6-UDFNB (2x2)
- Vgs(th) (Max) @ Id :
- 1V @ 1mA
product description
MOSFET 2N-CH 20V 4A UDFN
Purchases and prices
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