Product overview
- Product number
- SSM6N16FUTE85LF
- Manufacturer
- Toshiba Electronic Devices and Storage Corporation
- product description
- MOSFET 2N-CH 20V 0.1A US6
Documents and media
- Datasheets
- SSM6N16FUTE85LF
Product Details
- Current - Continuous Drain (Id) @ 25°C :
- 100mA
- Drain to Source Voltage (Vdss) :
- 20V
- FET Feature :
- Standard
- FET Type :
- 2 N-Channel (Dual)
- Gate Charge (Qg) (Max) @ Vgs :
- -
- Input Capacitance (Ciss) (Max) @ Vds :
- 9.3pF @ 3V
- Mounting Type :
- Surface Mount
- Operating Temperature :
- 150°C (TJ)
- Package / Case :
- 6-TSSOP, SC-88, SOT-363
- Part Status :
- Active
- Power - Max :
- 200mW
- Rds On (Max) @ Id, Vgs :
- 3Ohm @ 10mA, 4V
- Supplier Device Package :
- US6
- Vgs(th) (Max) @ Id :
- 1.1V @ 100µA
product description
MOSFET 2N-CH 20V 0.1A US6
