Product overview
- Product number
- SSM6N55NU,LF
- Manufacturer
- Toshiba Electronic Devices and Storage Corporation
- product description
- MOSFET 2N-CH 30V 4A UDFN6
Documents and media
- Datasheets
- SSM6N55NU,LF
Product Details
- Current - Continuous Drain (Id) @ 25°C :
- 4A
- Drain to Source Voltage (Vdss) :
- 30V
- FET Feature :
- Logic Level Gate
- FET Type :
- 2 N-Channel (Dual)
- Gate Charge (Qg) (Max) @ Vgs :
- 2.5nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds :
- 280pF @ 15V
- Mounting Type :
- Surface Mount
- Operating Temperature :
- 150°C (TJ)
- Package / Case :
- 6-WDFN Exposed Pad
- Part Status :
- Active
- Power - Max :
- 1W
- Rds On (Max) @ Id, Vgs :
- 46mOhm @ 4A, 10V
- Supplier Device Package :
- 6-µDFN (2x2)
- Vgs(th) (Max) @ Id :
- 2.5V @ 100µA
product description
MOSFET 2N-CH 30V 4A UDFN6
