Product overview
- Product number
- FDS6900S
- Manufacturer
- Rochester Electronics
- product description
- N-CHANNEL POWER MOSFET
Documents and media
- Datasheets
- FDS6900S
Product Details
- Current - Continuous Drain (Id) @ 25°C :
- 6.9A (Ta), 8.2A (Ta)
- Drain to Source Voltage (Vdss) :
- 30V
- FET Feature :
- Logic Level Gate
- FET Type :
- 2 N-Channel (Dual)
- Gate Charge (Qg) (Max) @ Vgs :
- 11nC @ 5V, 17nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds :
- 771pF @ 15V, 1238pF @ 15V
- Mounting Type :
- Surface Mount
- Operating Temperature :
- -55°C ~ 150°C (TJ)
- Part Status :
- Active
- Power - Max :
- 900mW (Ta)
- Rds On (Max) @ Id, Vgs :
- 30mOhm @ 6.9A, 10V, 22mOhm @ 8.2A, 10V
- Supplier Device Package :
- 8-SOIC
- Vgs(th) (Max) @ Id :
- 3V @ 250µA, 3V @ 1mA
product description
N-CHANNEL POWER MOSFET
