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Product overview

Product number
PJQ5606_R2_00001
Manufacturer
PANJIT
Catalog
Transistors - FETs, MOSFETs - Arrays
product description
30V COMPLEMENTARY ENHANCEMENT MO

Documents and media

Datasheets
PJQ5606_R2_00001

Product Details

Current - Continuous Drain (Id) @ 25°C :
7A (Ta), 25A (Tc), 6.1A (Ta), 22A (Tc)
Drain to Source Voltage (Vdss) :
30V
FET Feature :
Standard
FET Type :
N and P-Channel Complementary
Gate Charge (Qg) (Max) @ Vgs :
4.8nC @ 4.5V, 7.8nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds :
429pF @ 25V, 846pF @ 15V
Mounting Type :
Surface Mount
Operating Temperature :
-55°C ~ 150°C (TJ)
Package / Case :
8-PowerTDFN
Part Status :
Active
Power - Max :
1.7W (Ta), 21W (Tc)
Rds On (Max) @ Id, Vgs :
19mOhm @ 8A, 10V, 30mOhm @ 4A, 10V
Supplier Device Package :
DFN5060B-8
Vgs(th) (Max) @ Id :
2.5V @ 250µA

product description

30V COMPLEMENTARY ENHANCEMENT MO

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