Product overview
- Product number
- DF23MR12W1M1PB11BPSA1
- Manufacturer
- Infineon Technologies
- product description
- MOSFET MODULE 1200V
Documents and media
- Datasheets
- DF23MR12W1M1PB11BPSA1
Product Details
- Current - Continuous Drain (Id) @ 25°C :
- 25A (Tj)
- Drain to Source Voltage (Vdss) :
- 1200V (1.2kV)
- FET Feature :
- Silicon Carbide (SiC)
- FET Type :
- 2 N-Channel (Dual)
- Gate Charge (Qg) (Max) @ Vgs :
- 62nC @ 15V
- Input Capacitance (Ciss) (Max) @ Vds :
- 1840pF @ 800V
- Mounting Type :
- Chassis Mount
- Operating Temperature :
- -40°C ~ 150°C (TJ)
- Package / Case :
- Module
- Part Status :
- Active
- Power - Max :
- 20mW
- Rds On (Max) @ Id, Vgs :
- 45mOhm @ 25A, 15V
- Supplier Device Package :
- AG-EASY1B-2
- Vgs(th) (Max) @ Id :
- 5.55V @ 10mA
product description
MOSFET MODULE 1200V