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Product overview

Product number
3N166 TO-99 6L
Manufacturer
Linear Integrated Systems, Inc.
Catalog
Transistors - FETs, MOSFETs - Arrays
product description
MONOLITHIC DUAL, P-CHANNEL ENHAN

Documents and media

Datasheets
3N166 TO-99 6L

Product Details

Current - Continuous Drain (Id) @ 25°C :
50mA (Ta)
Drain to Source Voltage (Vdss) :
30V
FET Feature :
Standard
FET Type :
2 P-Channel (Dual)
Gate Charge (Qg) (Max) @ Vgs :
-
Input Capacitance (Ciss) (Max) @ Vds :
-
Mounting Type :
Through Hole
Operating Temperature :
-55°C ~ 150°C
Package / Case :
TO-99-6 Metal Can
Part Status :
Active
Power - Max :
300mW (Ta)
Rds On (Max) @ Id, Vgs :
300Ohm @ 100µA, 20V
Supplier Device Package :
TO-99-6
Vgs(th) (Max) @ Id :
5V @ 10µA

product description

MONOLITHIC DUAL, P-CHANNEL ENHAN

Purchases and prices

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