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Product overview

Product number
RJK0230DPA-00#J5A
Manufacturer
Rochester Electronics
Catalog
Transistors - FETs, MOSFETs - Arrays
product description
POWER FIELD-EFFECT TRANSISTOR

Documents and media

Datasheets
RJK0230DPA-00#J5A

Product Details

Current - Continuous Drain (Id) @ 25°C :
20A, 50A
Drain to Source Voltage (Vdss) :
25V
FET Feature :
Logic Level Gate
FET Type :
2 N-Channel (Half Bridge)
Gate Charge (Qg) (Max) @ Vgs :
7.7nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds :
1650pF @ 10V
Mounting Type :
Surface Mount
Operating Temperature :
150°C (TJ)
Package / Case :
8-PowerVDFN
Part Status :
Active
Power - Max :
15W, 35W
Rds On (Max) @ Id, Vgs :
7mOhm @ 10A, 10V
Supplier Device Package :
8-WPAK-D
Vgs(th) (Max) @ Id :
-

product description

POWER FIELD-EFFECT TRANSISTOR

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