Product overview
- Product number
- QH8M22TCR
- Manufacturer
- ROHM Semiconductor
- product description
- QH8M22 IS THE HIGH RELIABILITY T
Documents and media
- Datasheets
- QH8M22TCR
Product Details
- Current - Continuous Drain (Id) @ 25°C :
- 4.5A (Ta), 2A (Ta)
- Drain to Source Voltage (Vdss) :
- 40V
- FET Feature :
- Standard
- FET Type :
- N and P-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 2.6nC @ 10V, 9.5nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 193pF @ 20V, 450pF @ 20V
- Mounting Type :
- Surface Mount
- Operating Temperature :
- 150°C (TJ)
- Package / Case :
- 8-SMD, Flat Lead
- Part Status :
- Active
- Power - Max :
- 1.1W (Ta)
- Rds On (Max) @ Id, Vgs :
- 46mOhm @ 4.5A, 10V, 190mOhm @ 2A, 10V
- Supplier Device Package :
- TSMT8
- Vgs(th) (Max) @ Id :
- 2.5V @ 10µA, 3V @ 1mA
product description
QH8M22 IS THE HIGH RELIABILITY T
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