Product overview
- Product number
- TSM6502CR RLG
- Manufacturer
- Taiwan Semiconductor
- product description
- MOSFET N/P-CH 60V 24A/18A 8PDFN
Documents and media
- Datasheets
- TSM6502CR RLG
Product Details
- Current - Continuous Drain (Id) @ 25°C :
- 24A (Tc), 18A (Tc)
- Drain to Source Voltage (Vdss) :
- 60V
- FET Feature :
- Standard
- FET Type :
- N and P-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 10.3nC @ 4.5V, 9.5nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds :
- 1159pF @ 30V, 930pF @ 30V
- Mounting Type :
- Surface Mount
- Operating Temperature :
- -55°C ~ 150°C (TJ)
- Package / Case :
- 8-PowerTDFN
- Part Status :
- Active
- Power - Max :
- 40W
- Rds On (Max) @ Id, Vgs :
- 34mOhm @ 5.4A, 10V, 68mOhm @ 4A, 10V
- Supplier Device Package :
- 8-PDFN (5x6)
- Vgs(th) (Max) @ Id :
- 2.5V @ 250µA
product description
MOSFET N/P-CH 60V 24A/18A 8PDFN
Purchases and prices
Recommended Products
You may be looking for
US2:84HUG95WDG
R88D-WTA5H
5SGXMABN2F45I3G
05340COSNB20008309884
HCB7006C/T/P4S UL
SIT3373AC-2B3-28NX432.000000
DC-ME-01T-INT-1
6SL32202YE560CB0
SIT3373AC-4E3-28NY223.000000
3G3DV-E4004-B001
SMR6002(X)
SIT3373AC-4B3-33NX614.000000
SIT9120AC-2B2-25E133.333300
5SGXMA7K1F40I2WN
US2:84HUG95WDD
R88D-WTA5HL
EP4SGX230FF35I4G
H2601CYZ0097009775
HCB7804C/T/P4S UL
SIT3373AC-2B3-33NE445.500000