Product overview
- Product number
- RN1106MFV,L3XHF(CT
- Manufacturer
- Toshiba Electronic Devices and Storage Corporation
- product description
- AUTO AEC-Q NPN Q1BSR=4.7K, Q1BER
Documents and media
- Datasheets
- RN1106MFV,L3XHF(CT
Product Details
- Current - Collector (Ic) (Max) :
- 100 mA
- Current - Collector Cutoff (Max) :
- 500nA
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 80 @ 1mA, 5V
- Frequency - Transition :
- -
- Mounting Type :
- Surface Mount
- Package / Case :
- SOT-723
- Part Status :
- Active
- Power - Max :
- 150 mW
- Resistor - Base (R1) :
- 4.7 kOhms
- Resistor - Emitter Base (R2) :
- 47 kOhms
- Supplier Device Package :
- VESM
- Transistor Type :
- NPN - Pre-Biased
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 500µA, 5mA
- Voltage - Collector Emitter Breakdown (Max) :
- 50 V
product description
AUTO AEC-Q NPN Q1BSR=4.7K, Q1BER
Purchases and prices
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