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Product overview

Product number
PBSS8110S,126
Manufacturer
NXP Semiconductors
Catalog
Transistors - Bipolar (BJT) - Single
product description
TRANS NPN 100V 1A TO92

Documents and media

Datasheets
PBSS8110S,126

Product Details

Current - Collector (Ic) (Max) :
1 A
Current - Collector Cutoff (Max) :
100nA
DC Current Gain (hFE) (Min) @ Ic, Vce :
150 @ 250mA, 10V
Frequency - Transition :
100MHz
Mounting Type :
Through Hole
Operating Temperature :
150°C (TJ)
Package / Case :
TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Part Status :
Obsolete
Power - Max :
830 mW
Supplier Device Package :
TO-92-3
Transistor Type :
NPN
Vce Saturation (Max) @ Ib, Ic :
200mV @ 100mA, 1A
Voltage - Collector Emitter Breakdown (Max) :
100 V

product description

TRANS NPN 100V 1A TO92

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