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Product overview

Product number
2SC5819(TE12L,ZF)
Manufacturer
Toshiba Electronic Devices and Storage Corporation
Catalog
Transistors - Bipolar (BJT) - Single
product description
MOSFET N-CH

Documents and media

Datasheets
2SC5819(TE12L,ZF)

Product Details

Current - Collector (Ic) (Max) :
1.5 A
Current - Collector Cutoff (Max) :
100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce :
400 @ 150mA, 2V
Frequency - Transition :
-
Mounting Type :
Surface Mount
Operating Temperature :
150°C (TJ)
Package / Case :
TO-243AA
Part Status :
Active
Power - Max :
1 W
Supplier Device Package :
PW-MINI
Transistor Type :
NPN
Vce Saturation (Max) @ Ib, Ic :
120mV @ 10mA, 500mA
Voltage - Collector Emitter Breakdown (Max) :
20 V

product description

MOSFET N-CH

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