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Product overview

Product number
2SD2206,T6F(J
Manufacturer
Toshiba Electronic Devices and Storage Corporation
Catalog
Transistors - Bipolar (BJT) - Single
product description
TRANS NPN 2A 100V TO226-3

Documents and media

Datasheets
2SD2206,T6F(J

Product Details

Current - Collector (Ic) (Max) :
2 A
Current - Collector Cutoff (Max) :
10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce :
2000 @ 1A, 2V
Frequency - Transition :
100MHz
Mounting Type :
Through Hole
Operating Temperature :
150°C (TJ)
Package / Case :
TO-226-3, TO-92-3 Long Body
Part Status :
Obsolete
Power - Max :
900 mW
Supplier Device Package :
TO-92MOD
Transistor Type :
NPN
Vce Saturation (Max) @ Ib, Ic :
1.5V @ 1mA, 1A
Voltage - Collector Emitter Breakdown (Max) :
100 V

product description

TRANS NPN 2A 100V TO226-3

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