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Product overview

Product number
2SD1221-Y(Q)
Manufacturer
Toshiba Electronic Devices and Storage Corporation
Catalog
Transistors - Bipolar (BJT) - Single
product description
TRANS NPN 60V 3A PW MOLD

Documents and media

Datasheets
2SD1221-Y(Q)

Product Details

Current - Collector (Ic) (Max) :
3 A
Current - Collector Cutoff (Max) :
100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce :
100 @ 500mA, 5V
Frequency - Transition :
3MHz
Mounting Type :
Surface Mount
Operating Temperature :
150°C (TJ)
Package / Case :
TO-252-3, DPak (2 Leads + Tab), SC-63
Part Status :
Obsolete
Power - Max :
1 W
Supplier Device Package :
PW-MOLD
Transistor Type :
NPN
Vce Saturation (Max) @ Ib, Ic :
1V @ 300mA, 3A
Voltage - Collector Emitter Breakdown (Max) :
60 V

product description

TRANS NPN 60V 3A PW MOLD

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