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Product overview

Product number
2SD1407A-Y(F)
Manufacturer
Toshiba Electronic Devices and Storage Corporation
Catalog
Transistors - Bipolar (BJT) - Single
product description
TRANS NPN 100V 5A TO220NIS

Documents and media

Datasheets
2SD1407A-Y(F)

Product Details

Current - Collector (Ic) (Max) :
5 A
Current - Collector Cutoff (Max) :
100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce :
120 @ 1A, 5V
Frequency - Transition :
12MHz
Mounting Type :
Through Hole
Operating Temperature :
150°C (TJ)
Package / Case :
TO-220-3 Full Pack
Part Status :
Obsolete
Power - Max :
30 W
Supplier Device Package :
TO-220NIS
Transistor Type :
NPN
Vce Saturation (Max) @ Ib, Ic :
2V @ 400mA, 4A
Voltage - Collector Emitter Breakdown (Max) :
100 V

product description

TRANS NPN 100V 5A TO220NIS

Purchases and prices

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