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Product overview

Product number
2N2907AE4
Manufacturer
Microchip Technology
Catalog
Transistors - Bipolar (BJT) - Single
product description
DIE TRANS PNP MED PWR GEN PURP T

Documents and media

Datasheets
2N2907AE4

Product Details

Current - Collector (Ic) (Max) :
600 mA
Current - Collector Cutoff (Max) :
10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce :
100 @ 150mA, 10V
Frequency - Transition :
-
Mounting Type :
Through Hole
Operating Temperature :
-65°C ~ 200°C (TJ)
Package / Case :
TO-206AA, TO-18-3 Metal Can
Part Status :
Active
Power - Max :
500 mW
Supplier Device Package :
TO-18 (TO-206AA)
Transistor Type :
PNP
Vce Saturation (Max) @ Ib, Ic :
1.6V @ 50mA, 500mA
Voltage - Collector Emitter Breakdown (Max) :
60 V

product description

DIE TRANS PNP MED PWR GEN PURP T

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