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Product overview

Product number
2N5366
Manufacturer
NTE Electronics, Inc.
Catalog
Transistors - Bipolar (BJT) - Single
product description
T-PNP SI-GEN PUR AMP SW

Documents and media

Datasheets
2N5366

Product Details

Current - Collector (Ic) (Max) :
500 mA
Current - Collector Cutoff (Max) :
100nA
DC Current Gain (hFE) (Min) @ Ic, Vce :
100 @ 50mA, 1V
Frequency - Transition :
-
Mounting Type :
Through Hole
Operating Temperature :
-55°C ~ 150°C (TJ)
Package / Case :
TO-226-3, TO-92-3 (TO-226AA)
Part Status :
Active
Power - Max :
625 mW
Supplier Device Package :
TO-92-3
Transistor Type :
PNP
Vce Saturation (Max) @ Ib, Ic :
1V @ 30mA, 300mA
Voltage - Collector Emitter Breakdown (Max) :
40 V

product description

T-PNP SI-GEN PUR AMP SW

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